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| SI2316DS New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES D TrenchFETr Power MOSFET ID (A) 3.4 2.6 rDS(on) (W) 0.050 @ VGS = 10 V 0.085 @ VGS = 4.5 V APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 D S 2 Top View SI2316DS (C6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b _ Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS 5 sec 30 "20 3.4 Steady State Unit V 2.9 2.3 16 0.8 A ID IDM IS 2.7 0.96 PD TJ, Tstg 0.6 -55 to 150 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature Steady State Steady State RthJA RthJF Symbol Typical 100 140 60 Maximum 130 175 75 Unit _C/W C/W Document Number: 71798 S-05481--Rev. A, 21-Jan-02 www.vishay.com 1 SI2316DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage ID(on) rDS(on) gfs VSD V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 3.4 A VGS = 4.5 V, ID = 2.6 A VDS = 4.5 V, ID = 3.4 A IS = 0.8 A, VGS = 0 V 6 4 0.042 0.068 6.0 0.8 1.2 0.050 0.085 A W S V 30 0.8 "100 0.5 10 V nA mA m Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 3.4 A 4.3 0.65 1.2 215 90 55 pF 7 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf VDD = 15 V, RL = 15 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W 9 9 14 6 15 15 20 12 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 16 14 12 I D - Drain Current (A) 4V 10 8 6 3V 4 2 2V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 I D - Drain Current (A) VGS = 10 thru 5 V 16 14 12 10 8 6 4 2 TC = 125_C 25_C -55_C Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71798 S-05481--Rev. A, 21-Jan-02 www.vishay.com 2 SI2316DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 350 300 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.4 250 Ciss 200 150 100 0.1 VGS = 4.5 V VGS = 10 V 0.0 0 2 4 6 8 10 12 14 16 50 0 0 5 10 15 20 25 30 Crss Coss Vishay Siliconix Capacitance 0.3 0.2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 3.4 A 8 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.4 A 1.5 6 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 1.0 4 0.5 2 0 0 1 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.4 ID = 3.4 A 0.3 1 TJ = 25_C 0.2 0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71798 S-05481--Rev. A, 21-Jan-02 www.vishay.com 3 SI2316DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 10 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 8 6 TA = 25_C 4 -0.2 -0.4 2 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71798 S-05481--Rev. A, 21-Jan-02 |
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